Epitaxial growth and interfacial structure of Sn on Si(111)-(7 7)
نویسندگان
چکیده
Room temperature stabilization of up to 3.5 ML epitaxial metastable a-Sn at the Si(1 1 1)-(7 7) surface is reported. The a-Sn layers remain stabilized at the interface even after the deposition of thick Sn layers that undergo the a-Sn ! b-Sn transformation. Additionally, a small decrease in the s-electron density at the Sn nucleus is found for submonolayer of Sn at the Sn/Si(1 1 1)-(7 7) interface. The epitaxial relationship between thick b-Sn layers on Si(1 1 1) is also shown. The results were obtained by low and high energy electron diffraction and Sn conversion electron M€ ossbauer spectroscopy. 2001 Elsevier Science B.V. All rights reserved.
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